Measurement of acid diffusion from PAG in photoresists by using TOF-SIMS with GCIB

Naoki Man; Atsushi Sekiguchi; Yoko Matsumoto

doi:10.1117/12.2085814

20 March 2015 Measurement of acid diffusion from PAG in photoresists by using TOF-SIMS with GCIB

Naoki Man, Atsushi Sekiguchi, Yoko Matsumoto

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94251H (2015) https://doi.org/10.1117/12.2085814
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

The role of photoresist has become more important for down scaling of electric devises. One of the key factors which identify the photoresist is a diffusion of acid through the lithography process. The ‘top coat method’ was proposed for measuring the distance of diffusion of acid which was generated from PAG and calculating the diffusion coefficient^1-3. In this method, top coat material containing PAG (2^nd layer) is coated on a PAG-free resist (1^st layer), then the exposure and PEB processes are performed. The generated acid in 2^nd layer during the exposure diffuses into 1^st layer when the PEB is performed. After that, we can obtain the acid diffusion length based on the quantity of film removed by the development. In this work, we applied TOF-SIMS measurement with gas cluster ion beam (GCIB) etching to the samples that were prepared for top coat method. This measurement has revealed the distribution of diffusing PAG and residual protecting groups of the resin in the resist (1^st layer). The diffusion length of the acid which is obtained by the top coat method has corresponded to the depth profile of the acid and the deprotection rate which is acquired by TOFSIMS with GCIB. We can estimate the marginal deprotection rate which is needed for the development by the result of these two methods. It has also been clear that the distributions of acid shifted into the resist according to the PEB temperature.

Citation Download Citation

Naoki Man, Atsushi Sekiguchi, and Yoko Matsumoto "Measurement of acid diffusion from PAG in photoresists by using TOF-SIMS with GCIB", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251H (20 March 2015); https://doi.org/10.1117/12.2085814

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