Integrated fab process for metal oxide EUV photoresist

Andrew Grenville; Jeremy T. Anderson; Benjamin L. Clark; Peter De Schepper; Joseph Edson; Michael Greer; Kai Jiang; Michael Kocsis; Stephen T. Meyers; Jason K. Stowers; Alan J. Telecky; Danilo De Simone; Geert Vandenberghe

doi:10.1117/12.2086006

20 March 2015 Integrated fab process for metal oxide EUV photoresist

Andrew Grenville, Jeremy T. Anderson, Benjamin L. Clark, Peter De Schepper, Joseph Edson, Michael Greer, Kai Jiang, Michael Kocsis, Stephen T. Meyers, Jason K. Stowers, Alan J. Telecky, Danilo De Simone, Geert Vandenberghe

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94250S (2015) https://doi.org/10.1117/12.2086006
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Inpria is developing directly patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography. Targeted formulations have achieved 13nm half-pitch at 35 mJ/cm² on an ASML’s NXE:3300B scanner. Inpria’s second-generation materials have an absorbance of 20/μm, thereby enabling an equivalent photon shot noise compared to conventional resists at a dose lower by a factor of 4X. These photoresists have ~40:1 etch selectivity into a typical carbon underlayer, so ultrathin 20nm films are possible, mitigating pattern collapse. In addition to lithographic performance, we review progress in parallel advances required to enable the transition from lab to fab for such a metal oxide photoresist. This includes considerations and data related to: solvent compatibility, metals cross-contamination, coat uniformity, stability, outgassing, and rework.

Citation Download Citation

Andrew Grenville, Jeremy T. Anderson, Benjamin L. Clark, Peter De Schepper, Joseph Edson, Michael Greer, Kai Jiang, Michael Kocsis, Stephen T. Meyers, Jason K. Stowers, Alan J. Telecky, Danilo De Simone, and Geert Vandenberghe "Integrated fab process for metal oxide EUV photoresist", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250S (20 March 2015); https://doi.org/10.1117/12.2086006

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available