Paper
20 March 2015 Recent progress of negative-tone imaging with EUV exposure
Toru Fujimori, Toru Tsuchihashi, Toshiro Itani
Author Affiliations +
Abstract
This study describes the recent progress of negative-tone imaging with EUV exposure (EUV-NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based developer to provide low swelling and smooth-dissolving behavior. Therefore, EUV-NTI is expected to offer several advantages in terms of performance, especially for improving line-width roughness (LWR), which is expected to resolve the resolution, LWR, and sensitivity (RLS) tradeoff. Herein, novel chemical amplified resist materials for EUV-NTI are investigated to improve LWR and sensitivity. Results indicate that the EUV-NTI has better performance than PTD, with ‘single digit mJ/cm2,while maintaining the LWR performance. Furthermore, EUV-NTI processing such as the pre-applied bake (PAB) temperature, post-exposure bake (PEB) temperature, development procedure, and rinse procedure are very effective for improving the lithographic performance. In addition, the lithographic performance with NXE3100 scanner is also reported.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Fujimori, Toru Tsuchihashi, and Toshiro Itani "Recent progress of negative-tone imaging with EUV exposure", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942505 (20 March 2015); https://doi.org/10.1117/12.2085706
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KEYWORDS
Line width roughness

Extreme ultraviolet lithography

Lithography

Scanners

Semiconducting wafers

Silicon

Extreme ultraviolet

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