Towards production ready processing with a state-of-the-art EUV cluster

Karen Petrillo; Nicole Saulnier; Richard Johnson; Luciana Meli; Chris Robinson; Chiew-seng Koay; Nelson Felix; Daniel Corliss; Matthew Colburn; Takashi Saito; Lior Huli; David Hetzer; Hiroie Matsumoto; Andrew Metz; Yudai Hira

doi:10.1117/12.2085894

13 March 2015 Towards production ready processing with a state-of-the-art EUV cluster

Karen Petrillo, Nicole Saulnier, Richard Johnson, Luciana Meli, Chris Robinson, Chiew-seng Koay, Nelson Felix, Daniel Corliss, Matthew Colburn, Takashi Saito, Lior Huli, David Hetzer, Hiroie Matsumoto, Andrew Metz, Yudai Hira

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94220R (2015) https://doi.org/10.1117/12.2085894
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

EUV lithography is one of the main candidates for enabling the next generation of devices, primarily by enabling a lithography process that reduces complexity, and eventually, cost. IBM has installed the latest tool sets at the IBM EUV Center of Excellence in Albany to accelerate EUV lithography development for production use. Though the EUV cluster is capable of enabling the pitch requirements for the 7nm node, the dimensions in question represent a new regime in defectivity. Additionally, new classes of patterning materials are being explored, for which there is very little known up-front regarding known defect mechanisms. We will discuss the baseline cluster performance and the improvement strategy in terms of defectivity and pattern collapse in this paper by utilizing coater/developer techniques based on the new platform.

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Karen Petrillo, Nicole Saulnier, Richard Johnson, Luciana Meli, Chris Robinson, Chiew-seng Koay, Nelson Felix, Daniel Corliss, Matthew Colburn, Takashi Saito, Lior Huli, David Hetzer, Hiroie Matsumoto, Andrew Metz, and Yudai Hira "Towards production ready processing with a state-of-the-art EUV cluster", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220R (13 March 2015); https://doi.org/10.1117/12.2085894

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