Relaxation Of Ultrafast Electrons In Semiconductors: Many Body Effects

Sankar Das Sarnia; Jainendra K. Jain; Rodolfo Jalabert

doi:10.1117/12.947192

22 August 1988 Relaxation Of Ultrafast Electrons In Semiconductors: Many Body Effects

Sankar Das Sarnia, Jainendra K. Jain, Rodolfo Jalabert

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947192
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The transport of highly excited carriers is governed by their energy loss to phonons. There is a special interest in a thorough understanding of this phenomenon in semiconductors, as it can be of help in determining the characteristics of ultrasmall, high field devices. Recently developed steady-state electric-field-induced heating techniques provide a very adequate tool to study hot electrons since the electronic measurement of the power innut to the electron system, together with the optical determination of the electron temperature, gives a direct determination of the nower loss (P) of hot electrons as a function of temperature (T) for a fixed electron density (n).

Citation Download Citation

Sankar Das Sarnia, Jainendra K. Jain, and Rodolfo Jalabert "Relaxation Of Ultrafast Electrons In Semiconductors: Many Body Effects", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947192

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