Picosecond Studies Of Hot Phonon Generation In III-V Semiconductors

J. A. Kash

doi:10.1117/12.947207

22 August 1988 Picosecond Studies Of Hot Phonon Generation In III-V Semiconductors

J. A. Kash

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947207
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The technique of picosecond time resolved Raman scattering in semiconductors is reviewed. With the technique, details of the initial relaxation of optically injected hot carriers in polar semiconductors can be directly studied. Experiments on intrinsic and doped GaAs measure carrier-phonon interaction times, the wavevector dependence of the hot phonon distribution, and the influence of holes on the longitudinal optical phonon lifetime. Studies in AlxGa1-As probe the influence of alloy disorder on the generation of hot phonons. In addition, because there are two optic phonon modes in AlGa1-xAs, we can experimentally measure the effect of ionicity (the frequency difference between longitudinal and transverse optical phonons) on these processes.

Citation Download Citation

J. A. Kash "Picosecond Studies Of Hot Phonon Generation In III-V Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947207

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