Ultra-broadband GaInNAs semiconductor optical amplifier incorporating N compositional fluctuations for the next generation passive optical network

Xiao Sun; Qingjiang Chang

doi:10.1117/12.2077686

7 February 2015 Ultra-broadband GaInNAs semiconductor optical amplifier incorporating N compositional fluctuations for the next generation passive optical network

Xiao Sun, Qingjiang Chang

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Proceedings Volume 9387, Broadband Access Communication Technologies IX; 93870X (2015) https://doi.org/10.1117/12.2077686
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Compositional fluctuations of the N in GaInNAs results in QD-like fluctuations in the conduction band minimum. The GaInNAs SOA gain is significantly broadened by adding the gain of both QW and QD-like fluctuations, providing a < 18 dB gain over 107 nm bandwidth cross both C and L bands in NG-PON2 applications.

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Xiao Sun and Qingjiang Chang "Ultra-broadband GaInNAs semiconductor optical amplifier incorporating N compositional fluctuations for the next generation passive optical network", Proc. SPIE 9387, Broadband Access Communication Technologies IX, 93870X (7 February 2015); https://doi.org/10.1117/12.2077686

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KEYWORDS

Quantum wells

Passive optical networks

Photons

L band

Semiconductor optical amplifiers

Telecommunications

Coarse wavelength division multiplexing

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