Paper
9 March 2015 Nitride heterostructure influence on efficiency droop
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Abstract
The influence of nitride heterostructures on efficiency droop is presented. It was developed a special method based on simulation for investigating the changes in the semiconductor devices characteristics due to different influencing factors. The cause of efficiency droop was detected - large difference in carrier lifetimes. The simulation results are used to suggest several ways for improving LED efficiency about 12 %.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg Rabinovich, Sergei Didenko, and Sergei Legotin "Nitride heterostructure influence on efficiency droop", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 938310 (9 March 2015); https://doi.org/10.1117/12.2078317
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum wells

Silicon

Light emitting diodes

Heterojunctions

Gallium nitride

Indium

Indium gallium nitride

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