Paper
10 March 2015 Effects of temperature and difference-wavelength on mode stability in Dual-λ QD lasers
Author Affiliations +
Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820J (2015) https://doi.org/10.1117/12.2085511
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We employ a device which exploits the properties of InP quantum dots (QD), (emitting from 650-730 nm), to produce simultaneous dual-λ lasing from a single ridge-waveguide comprising two sections. Due to the effects of state-filling in an inhomogeneously broadened QD ensemble, the wavelength is strongly dependent on magnitude of the gain (or cavity loss). Therefore, by altering the loss of each section of the device we are able to demonstrate a large range of difference-wavelengths, up to 63 nm. Here, we test the performance of the device and measure effects of temperature and difference-wavelength on the stability of the two lasing modes.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Samuel Shutts, Peter M. Smowton, and Andrey B. Krysa "Effects of temperature and difference-wavelength on mode stability in Dual-λ QD lasers", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820J (10 March 2015); https://doi.org/10.1117/12.2085511
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Aluminium gallium indium phosphide

Etching

Quantum wells

Waveguides

Neodymium

Quantum dots

Transmission electron microscopy

Back to Top