Tunable optical buffer based on III-V MEMS design

Wing H. Ng; Nina Podoliak; Peter Horak; Jiang Wu; Huiyun Liu; William J. Stewart; Anthony J. Kenyon

doi:10.1117/12.2078224

27 February 2015 Tunable optical buffer based on III-V MEMS design

Wing H. Ng, Nina Podoliak, Peter Horak, Jiang Wu, Huiyun Liu, William J. Stewart, Anthony J. Kenyon

Proceedings Volume 9375, MOEMS and Miniaturized Systems XIV; 93750Q (2015) https://doi.org/10.1117/12.2078224
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We present the design and fabrication of a tunable optical buffer device based on III-V semiconductor platform for telecommunication applications. The device comprises two indium phosphide suspended parallel waveguides with cross sectional dimension of 200 nm by 300 nm, separated by an air gap. The gap between the waveguides was designed to be adjustable by electrostatic force. Our simulation estimated that only 3 V is required to increase the separation distance from 50 nm to 500 nm; this translates to a change in the propagation delay by a factor of 2. The first generation of the suspended waveguide structure for optical buffering was fabricated. The sample was grown on an InP substrate by molecular beam epitaxy. The waveguide pattern is written onto a 300 nm thick InP device layer by electron beam lithography and plasma etching. Electrodes were incorporated into the structure to apply voltages for MEMS actuation.

Citation Download Citation

Wing H. Ng, Nina Podoliak, Peter Horak, Jiang Wu, Huiyun Liu, William J. Stewart, and Anthony J. Kenyon "Tunable optical buffer based on III-V MEMS design", Proc. SPIE 9375, MOEMS and Miniaturized Systems XIV, 93750Q (27 February 2015); https://doi.org/10.1117/12.2078224

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KEYWORDS

Waveguides

Indium gallium arsenide

Microelectromechanical systems

Electron beam lithography

Wave propagation

Electrodes

Etching

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