Effects of low energy H-ion implantation on the optical properties of ZnMgO thin films

Shantanu Saha; Saurabh Nagar; S. K. Gupta; Subhananda Chakrabarti

doi:10.1117/12.2079139

13 March 2015 Effects of low energy H^- ion implantation on the optical properties of ZnMgO thin films

Shantanu Saha, Saurabh Nagar, S. K. Gupta, Subhananda Chakrabarti

Proceedings Volume 9364, Oxide-based Materials and Devices VI; 93641Y (2015) https://doi.org/10.1117/12.2079139
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

The optical and structural characteristics of H⁻ ion-implanted ZnMgO were investigated by temperature-dependent photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD). Low-energy (40 keV and 50 keV) hydrogen implantation was performed on RF-sputter-deposited ZnMgO thin films by varying the fluences from 10¹³ ions/cm² to 5 × 10¹⁴ ions/cm² . Highly c-axis-oriented <002> ZnO films were observed for all samples, as confirmed by HRXRD. A gradual decrease in the acceptor concentration was observed with increasing fluence, as confirmed by low-temperature PL results. This suggests that hydrogen atoms act as a shallow donor.

Citation Download Citation

Shantanu Saha, Saurabh Nagar, S. K. Gupta, and Subhananda Chakrabarti "Effects of low energy H^- ion implantation on the optical properties of ZnMgO thin films", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641Y (13 March 2015); https://doi.org/10.1117/12.2079139

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