Strong carrier localization in stacking faults in semipolar (11-22) GaN

Serdal Okur; Morteza Monavarian; Saikat Das; Natalia Izyumskaya; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür

doi:10.1117/12.2080248

13 March 2015 Strong carrier localization in stacking faults in semipolar (11-22) GaN

Serdal Okur, Morteza Monavarian, Saikat Das, Natalia Izyumskaya, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93632N (2015) https://doi.org/10.1117/12.2080248
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL) and time- and polarization-resolved PL. We demonstrate that the carrier recombination dynamics are substantially influenced due to strong carrier localization in the stacking faults. In addition to nonradiative recombination, carrier trapping/detrapping and carrier transfer between the stacking faults and donors are also found to be among the mechanisms affecting the recombination dynamics at different temperatures. PL decay times of both I₁-type BSF and 3.31 eV SF (E-type BSF or prismatic stacking fault) do not show temperature dependence up to 80 K while 3.31 eV SF exhibits longer PL decay times (~3 ns) at low temperatures as compared to I₁-type BSF (~1 ns), indicative of lower efficiency for radiative recombination. After 80 K, PL decay times decreased by power of ~-1 and ~-2 for 3.31 eV SF and I₁-type BSF, respectively. It is obtained from radiative decay times with respect to temperature that the carrier localization becomes higher in I₁-type BSF compared to 3.31 eV SF increasing the temperature. I₁-type BSF also shows higher PL intensity, which is attributed to larger density, and therefore, larger contribution to recombination dynamics as compared to other type of stacking faults. Polarization-resolved PL measurements also revealed that the degree of polarization for the I₁-type BSF (0.30) was twice that for the 3.31 eV SF.

Citation Download Citation

Serdal Okur, Morteza Monavarian, Saikat Das, Natalia Izyumskaya, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, and Ümit Özgür "Strong carrier localization in stacking faults in semipolar (11-22) GaN", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632N (13 March 2015); https://doi.org/10.1117/12.2080248

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available