Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Ville-Markus Korpijärvi; Emmi L. Kantola; Tomi Leinonen; Mircea Guina

doi:10.1117/12.2077517

4 March 2015 Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Ville-Markus Korpijärvi, Emmi L. Kantola, Tomi Leinonen, Mircea Guina

Proceedings Volume 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V; 93490D (2015) https://doi.org/10.1117/12.2077517
Event: SPIE LASE, 2015, San Francisco, California, United States

Abstract

We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

Citation Download Citation

Ville-Markus Korpijärvi, Emmi L. Kantola, Tomi Leinonen, and Mircea Guina "Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm", Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 93490D (4 March 2015); https://doi.org/10.1117/12.2077517

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