Epitaxial growth of CdMnTe quantum dots directly on Si(111)

Marielle H. M. B. Lage; Sukarno O. Ferreira; Angelo S. Malachias

doi:10.1117/12.2063464

28 August 2014 Epitaxial growth of CdMnTe quantum dots directly on Si(111)

Marielle H. M. B. Lage, Sukarno O. Ferreira, Angelo S. Malachias

Proceedings Volume 9167, Spintronics VII; 916708 (2014) https://doi.org/10.1117/12.2063464
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

The presence of magnetic ions in a diluted magnetic semiconductor (DMS) leads to a variety of electronic, optical and magneto-optical properties. For instance, the exchange interaction between the magnetic ions spin and the spin of carriers leads to formation of bound magnetic polarons (BMPs). In a diluted magnetic quantum dot (DMQD), the possibility of tuning the three dimensional confinement originates new magnetic effects not present in bulk or quantum wells and makes MPs a very interesting system. Recently, formation of robust MPs has been observed in type-II DMQDs, due to the spatial separation of electrons and holes. In this work, we report the growth and structural characterization of CdMnTe/Si quantum dots. The samples were grown by molecular beam epitaxy directly on Si(111) substrates, in contrast with the previously studied systems, where the DMS islands were grown on II-VI buffers layers. The use of Silicon as substrates is advantageous for its compatibility with most processes of the microelectronic industry. We have used atomic force microscopy, high-resolution transmission electron microscopy and high-resolution x-ray diffraction to investigate the effect of growth time and temperature on the morphology and structural characteristics of the quantum dots. Our results show that this system follows the Volmer-Weber growth mode and almost perfect epitaxial islands can be grown despite a lattice mismatch around 19%. The introduction of a small concentration Mn ions improves the structural quality of the islands, as observed by high resolution x-diffraction around the (111) Bragg reflection.

Citation Download Citation

Marielle H. M. B. Lage, Sukarno O. Ferreira, and Angelo S. Malachias "Epitaxial growth of CdMnTe quantum dots directly on Si(111)", Proc. SPIE 9167, Spintronics VII, 916708 (28 August 2014); https://doi.org/10.1117/12.2063464

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