Experimental demonstration of negative index of refraction in magnetic semiconductors

Adil-Gerai Kussow; Alkim Akyurtlu; Yassine Ait-El-Aoud; Hamzeh M. Jaradat

doi:10.1117/12.2060930

30 September 2014 Experimental demonstration of negative index of refraction in magnetic semiconductors

Adil-Gerai Kussow, Alkim Akyurtlu, Yassine Ait-El-Aoud, Hamzeh M. Jaradat

Proceedings Volume 9160, Metamaterials: Fundamentals and Applications 2014; 91601N (2014) https://doi.org/10.1117/12.2060930
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

Homogeneous negative refractive index materials are introduced as an alternative to normally utilized inhomogeneous metamaterials. The theory of such materials was developed several years ago (A. Kussow and A. Akyurtlu, PRB 78, 205202 (2008)), and the effect is due to the coexistence of the spin-wave mode with the plasmonic mode, and both modes are activated by the electromagnetic field with simultaneous negative permittivity and permeability responses within the narrow frequency band close to the ferromagnetic resonance. To justify this theory, the thin films of ferromagnetic semiconductor, Cr-doped indium oxide, were fabricated, with clearly measured ferromagnetism at high saturation magnetization and a Curie temperature which is much higher than room temperature. The refractive index, within mid-IR, was extracted from combined transmittance and reflectance data and was compared with theoretical prediction. Also, a direct standard beam displacement method validates the effect of negative refraction in this material.

Citation Download Citation

Adil-Gerai Kussow, Alkim Akyurtlu, Yassine Ait-El-Aoud, and Hamzeh M. Jaradat "Experimental demonstration of negative index of refraction in magnetic semiconductors", Proc. SPIE 9160, Metamaterials: Fundamentals and Applications 2014, 91601N (30 September 2014); https://doi.org/10.1117/12.2060930

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