InAsSb detector and FPA data and analysis

A. I. D'Souza; E. Robinson; A. C. Ionescu; D. Okerlund; T. J. De Lyon; R. D. Rajavel; H. Sharifi; N. K. Dhar; P. S. Wijewarnasuriya; C. Grein

doi:10.1117/12.2058150

21 May 2014 InAsSb detector and FPA data and analysis

A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. De Lyon, R. D. Rajavel, H. Sharifi, N. K. Dhar, P. S. Wijewarnasuriya, C. Grein

Author Affiliations +

Proceedings Volume 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications; 91000B (2014) https://doi.org/10.1117/12.2058150
Event: SPIE Sensing Technology + Applications, 2014, Baltimore, MD, United States

Abstract

InAsSb material with a cutoff wavelength in the 5 μm range has been grown on GaAs substrates. The MWIR InAsSb detector arrays were fabricated and hybridized to fanouts and ROICs to permit measurement of the electrical and optical properties of detectors. Detector arrays were fabricated in a 1024 x 1024 format on an 18 μm pitch. A fanout was utilized to directly acquire data from a set of selected detectors without an intervening read out integrating circuit (ROIC). Variable temperature Jdark vs Vd measurements have been made with the dark current density ~ 10^-5 A/cm² at 150 K. The external QE measured using a narrow band filter centered at ~ 4 μm had values in the 65 - 70 % range. Since the detectors were illuminated through a GaAs substrate which has a reflectance of 29%, the internal QE is greater than 90 %. A 1024 x 1024 ROIC on an 18 μm pitch was also designed and fabricated to interface with the barrier detectors. The ROIC operates at 30 Hz frame rate and has a well capacity of 20.7 M electrons. QE at 150 K for a 1024 x 1024 detector array hybridized to a ROIC had a median D* at 150 K under a flux of 1.07 x 10¹⁵ ph/(cm²/s was 1.2 x 10¹¹ cm Hz^1/2 /W. The NEdT was 44 mK and imagery was obtained at 150 K using an f/2.3 MWIR lens.

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A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. De Lyon, R. D. Rajavel, H. Sharifi, N. K. Dhar, P. S. Wijewarnasuriya, and C. Grein "InAsSb detector and FPA data and analysis", Proc. SPIE 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications, 91000B (21 May 2014); https://doi.org/10.1117/12.2058150

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KEYWORDS

Sensors

Quantum efficiency

Data modeling

Detector arrays

Readout integrated circuits

Mid-IR

Diodes

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