Paper
24 June 2014 Defect-related dark currents in III-V MWIR nBn detectors
G. R. Savich, D. E. Sidor, X. Du, M. Jain, C. P. Morath, V. M. Cowan, J. K. Kim, J. F. Klem, D. Leonhardt, S. D. Hawkins, T. R. Fortune, A. Tauke-Pedretti, G. W. Wicks
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Abstract
The effect of defects on the dark current characteristics of MWIR, III-V nBn detectors has been studied. Two different types of defects are compared, those produced by lattice mismatch and by proton irradiation. It is shown that the introduction of defects always elevates dark currents; however the effect on dark current is different for nBn detectors and conventional photodiodes. The dark currents of nBn detectors are found to be more tolerant of defects compared to pn-junction based devices. Defects more weakly increase dark currents, and cooling reduces the defect-produced dark currents more rapidly in nBn detectors than in conventional photodiodes.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. R. Savich, D. E. Sidor, X. Du, M. Jain, C. P. Morath, V. M. Cowan, J. K. Kim, J. F. Klem, D. Leonhardt, S. D. Hawkins, T. R. Fortune, A. Tauke-Pedretti, and G. W. Wicks "Defect-related dark currents in III-V MWIR nBn detectors", Proc. SPIE 9070, Infrared Technology and Applications XL, 907011 (24 June 2014); https://doi.org/10.1117/12.2050535
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Photodiodes

Indium arsenide

Mid-IR

Gallium arsenide

Photodetectors

Radiation effects

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