Low-dark current 1024x1280 InGaAs PIN arrays

Ping Yuan; James Chang; Joseph C. Boisvert; Nasser Karam

doi:10.1117/12.2053999

24 June 2014 Low-dark current 1024×1280 InGaAs PIN arrays

Ping Yuan, James Chang, Joseph C. Boisvert, Nasser Karam

Proceedings Volume 9070, Infrared Technology and Applications XL; 907007 (2014) https://doi.org/10.1117/12.2053999
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

Photon counting imaging applications requires low noise from both detector and readout integrated circuit (ROIC) arrays. In order to retain the photon-counting-level sensitivity, a long integration time has to be employed and the dark current has to be minimized. It is well known that the PIN dark current is sensitive to temperature and a dark current density of 0.5 nA/cm² was demonstrated at 7 °C previously. In order to restrain the size, weight, and power consumption (SWaP) of cameras for persistent large-area surveillance on small platforms, it is critical to develop large format PIN arrays with small pitch and low dark current density at higher operation temperatures. Recently Spectrolab has grown, fabricated and tested 1024x1280 InGaAs PIN arrays with 12.5 μm pitch and achieved 0.7 nA/cm² dark current density at 15 °C. Based on our previous low-dark-current PIN designs, the improvements were focused on 1) the epitaxial material design and growth control; and 2) PIN device structure to minimize the perimeter leakage current and junction diffusion current. We will present characterization data and analyses that illustrate the contribution of various dark current mechanisms.

Citation Download Citation

Ping Yuan, James Chang, Joseph C. Boisvert, and Nasser Karam "Low-dark current 1024×1280 InGaAs PIN arrays", Proc. SPIE 9070, Infrared Technology and Applications XL, 907007 (24 June 2014); https://doi.org/10.1117/12.2053999

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