Nanostructured system SiO2/Si by ArF excimer laser irradiation

C. T. Huynh; A. M. Skvortsov; A. A. Petrov

doi:10.1117/12.2053278

28 November 2013 Nanostructured system SiO₂/Si by ArF excimer laser irradiation

C. T. Huynh, A. M. Skvortsov, A. A. Petrov

Proceedings Volume 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013; 90650T (2013) https://doi.org/10.1117/12.2053278
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2013, 2013, St. Petersburg, Russian Federation

Abstract

In this work, the formation of micro-and nanoscale periodic structures on the surface of system SiO₂/Si by nanosecond laser pulses has been investigated. Under irradiation of experimental samples with ultraviolet ArF laser pulse (193 nm) were obtained periodic wave-like structures on the surface. The dependence of the surface topology of system SiO₂/Si on the energy density of the laser pulse and the number of pulses has been studied.

Citation Download Citation

C. T. Huynh, A. M. Skvortsov, and A. A. Petrov "Nanostructured system SiO₂/Si by ArF excimer laser irradiation", Proc. SPIE 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013, 90650T (28 November 2013); https://doi.org/10.1117/12.2053278

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