Paper
2 April 2014 SEM simulation for 2D and 3D inspection metrology and defect review
Shimon Levi, Ishai Schwartsband, Sergey Khristo, Yan Ivanchenko, Ofer Adan
Author Affiliations +
Abstract
Advanced SEM simulation has become a key element in the ability of SEM inspection, metrology and defect review to meet the challenges of advanced technologies. It grants additional capabilities to the end user, such as 3D height measurements, accurate virtual metrology, and supports Design Based Metrology to bridge the gap between design layout and SEM image. In this paper we present SEM simulations capabilities, which take into consideration all parts of the SEM physical and electronic path, interaction between Electron beam and material, multi perspective SEM imaging and shadowing derived from proximity effects caused by the interaction of the Secondary Electrons signal with neighboring pattern edges. Optimizing trade-off between simulation accuracy, calibration procedures and computational complexity, the simulation is running in real-time with minimum impact on throughput. Experiment results demonstrate Height measurement capacities, and CAD based simulated pattern is compared with SEM image to evaluate simulated pattern fidelity.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shimon Levi, Ishai Schwartsband, Sergey Khristo, Yan Ivanchenko, and Ofer Adan "SEM simulation for 2D and 3D inspection metrology and defect review", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90510B (2 April 2014); https://doi.org/10.1117/12.2049337
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications and 5 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scanning electron microscopy

Computer aided design

Sensors

Computer simulations

Metrology

Semiconducting wafers

Inspection

Back to Top