Germanium light-emitting diodes on silicon for very-short-reach interconnect

Misuzu Sagawa; Katsuya Oda; Kazuki Tani; Yuji Suwa; Jun-ichi Kasai; Tadashi Okumura; Shin-ichi Saito; Tatemi Ido

doi:10.1117/12.2044830

19 February 2014 Germanium light-emitting diodes on silicon for very-short-reach interconnect

Misuzu Sagawa, Katsuya Oda, Kazuki Tani, Yuji Suwa, Jun-ichi Kasai, Tadashi Okumura, Shin-ichi Saito, Tatemi Ido

Proceedings Volume 9010, Next-Generation Optical Networks for Data Centers and Short-Reach Links; 90100I (2014) https://doi.org/10.1117/12.2044830
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Germanium light-emitting devices on silicon for very-short-reach interconnect were investigated theoretically and experimentally. Our approach to enhance light emission is by applying process-induced strain to the germanium active layer. According to first-principles calculations, larger optical gain in germanium with lower carrier density is obtained at a larger tensile strain. In addition to the thermally induced strain caused by the difference of the thermal expansion ratios, process-induced stress was applied to the germanium active layer by fabricating a SiN stressor on it. As for practical light-emitting devices, a laterally injected light-emitting device was fabricated and tested. In the case of this device, the current is laterally injected into the germanium active layer through a thin silicon layer. In this device structure, mode loss caused by free carrier absorption is expected to be small, since the guided mode overlaps slightly with the heavily doped silicon layer. The electroluminescence (EL) property of the device showed a superlinear increase in integrated EL intensity with increasing injection current, indicating that direct recombination is enhanced by L-valley filling. An increase in intensity and red-shift of the EL peaks of the device with a SiN stressor indicate that additional tensile strain was successfully applied to the germanium active layer.

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Misuzu Sagawa, Katsuya Oda, Kazuki Tani, Yuji Suwa, Jun-ichi Kasai, Tadashi Okumura, Shin-ichi Saito, and Tatemi Ido "Germanium light-emitting diodes on silicon for very-short-reach interconnect", Proc. SPIE 9010, Next-Generation Optical Networks for Data Centers and Short-Reach Links, 90100I (19 February 2014); https://doi.org/10.1117/12.2044830

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KEYWORDS

Germanium

Silicon

Electroluminescence

Light sources

Crystals

Electrons

Doping

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