Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1117/12.2044397

27 February 2014 Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices

J. Hader, J. V. Moloney, S. W. Koch

Proceedings Volume 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII; 900311 (2014) https://doi.org/10.1117/12.2044397
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Fully microscopic models for the calculation of the carrier dynamics and resulting optical response are used to investigate the validity of various models that have been suggested as the cause for the efficiency droop in GaN-based devices. Models based on internal piezoelectric electric fields, carrier localization, Auger and density-activated defect recombination are analysed. In particular, the models are used to simulate aspects of a recent experiment in which green emitting quantum wells were pumped resonantly and emission from adjacent ultra-violet emitting wells was attributed to carrier redistributions due to Auger processes. It is shown that the UV emission can be explained as a direct result of the optical excitation without involving Auger processes.

Citation Download Citation

J. Hader, J. V. Moloney, and S. W. Koch "Microscopic many-body investigation of the efficiency droop in GaN based light emitting devices", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900311 (27 February 2014); https://doi.org/10.1117/12.2044397

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