InSb photodetectors with PIN and nBn designs

A. Evirgen; J. Abautret; J. P. Perez; H. Aït-Kaci; P. Christol; J. Fleury; H. Sik; A. Nedelcu; R. Cluzel; A. Cordat

doi:10.1117/12.2039156

31 January 2014 InSb photodetectors with PIN and nBn designs

A. Evirgen, J. Abautret, J. P. Perez, H. Aït-Kaci, P. Christol, J. Fleury, H. Sik, A. Nedelcu, R. Cluzel, A. Cordat

Proceedings Volume 8993, Quantum Sensing and Nanophotonic Devices XI; 899313 (2014) https://doi.org/10.1117/12.2039156
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb (100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm^-2 at -50mV and R0A product as high as 6x10⁶ WΩcm² at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.

Citation Download Citation

A. Evirgen, J. Abautret, J. P. Perez, H. Aït-Kaci, P. Christol, J. Fleury, H. Sik, A. Nedelcu, R. Cluzel, and A. Cordat "InSb photodetectors with PIN and nBn designs", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899313 (31 January 2014); https://doi.org/10.1117/12.2039156

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