Analysis of electrical and electro-optical characteristics of midwave infrared InAs/GaSb SL pin photodiodes

M. Delmas; R. Taalat; J. B. Rodriguez; P. Christol; E. Giard; I. Ribet-Mohamed; J. Imbert; S. Derelle; V. Trinité

doi:10.1117/12.2039200

31 January 2014 Analysis of electrical and electro-optical characteristics of midwave infrared InAs/GaSb SL pin photodiodes

M. Delmas, R. Taalat, J. B. Rodriguez, P. Christol, E. Giard, I. Ribet-Mohamed, J. Imbert, S. Derelle, V. Trinité

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Proceedings Volume 8993, Quantum Sensing and Nanophotonic Devices XI; 89930Z (2014) https://doi.org/10.1117/12.2039200
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In this communication, we examine the influence of the SL period of InAs/GaSb superlattice (SL), with diverse InAs to GaSb thickness ratio, on the material and device properties of midwave infrared pin photodiodes. Three SL devices made of three different periods, but exhibiting the same cut-off wavelength at 5 μm at 77K, were grown by molecular beam epitaxy on p-type GaSb substrates. Optical and electrical characterizations (photoluminescence, current-voltage, capacitance-voltage, and photoresponse measurements) were performed and analyzed in order to explain the results obtained. Our investigations show the strong influence of the SL composition on both the material and photodetector properties, such as residual doping concentration, shape of the response spectra and dark current values.

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M. Delmas, R. Taalat, J. B. Rodriguez, P. Christol, E. Giard, I. Ribet-Mohamed, J. Imbert, S. Derelle, and V. Trinité "Analysis of electrical and electro-optical characteristics of midwave infrared InAs/GaSb SL pin photodiodes", Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 89930Z (31 January 2014); https://doi.org/10.1117/12.2039200

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