Doping profile recognition in silicon using terahertz time-domain spectroscopy

Chih-Yu Jen; Christiaan Richter

doi:10.1117/12.2036241

7 March 2014 Doping profile recognition in silicon using terahertz time-domain spectroscopy

Chih-Yu Jen, Christiaan Richter

Proceedings Volume 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII; 89850M (2014) https://doi.org/10.1117/12.2036241
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Here we demonstrate for the first time that terahertz time domain spectroscopy (THz-TDS) can be used to distinguish doping profile discrepancies in semiconductor silicon wafers. These proof of concept results suggest the suitability of the technique for in-line process control applications in both IC/photovoltaic (PV) industries. The experimental results show that THz radiation is sensitive to the implant dosage changes in the time domains.

Citation Download Citation

Chih-Yu Jen and Christiaan Richter "Doping profile recognition in silicon using terahertz time-domain spectroscopy", Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 89850M (7 March 2014); https://doi.org/10.1117/12.2036241

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available