Paper
7 March 2014 Evaluation of silicon tuning-fork resonators under space-relevant radiation conditions
T. Bandi, J. Baborowski, A. Dommann, H. Shea, F. Cardot, A. Neels
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Abstract
This work reports on irradiations made on silicon bulk-acoustic wave resonators. The resonators were based on a tuning fork geometry and actuated by a piezoelectric aluminum nitride layer. They had a resonance frequency of 150 kHz and a quality factor of about 20000 under vacuum. The susceptibility of the devices to radiation induced degradation was investigated using 60Co γ-rays and 50 MeV protons with space-relevant doses of up to 170 krad. The performance of the devices after irradiation indicated a high tolerance to both ionizing damage and displacement damage effects. The results support the efforts towards design and fabrication of highly reliable MEMS devices for space applications.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Bandi, J. Baborowski, A. Dommann, H. Shea, F. Cardot, and A. Neels "Evaluation of silicon tuning-fork resonators under space-relevant radiation conditions", Proc. SPIE 8975, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII, 89750I (7 March 2014); https://doi.org/10.1117/12.2044209
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KEYWORDS
Resonators

Silicon

Electrons

Microelectromechanical systems

Aluminum nitride

Radiation effects

Ionization

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