Paper
16 August 2013 Readout design for 1×64 quantum dot-in-well photodetector array based on wide dynamic range
Author Affiliations +
Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89121B (2013) https://doi.org/10.1117/12.2034652
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
In this paper, we studied the readout circuit for high sensitivity 1×64 InGaAs/GaAs/AlAs quantum dot-in-well photodetector array based on wide dynamic range. The improved design capacitor feedback trans-impedance amplifier (CTIA) is researched as a low-noise adaptive gain control (AGC) CTIA readout circuit. The dynamic range and sensitivity of the circuit was greatly increased. Two switches K1 and K2 were used to controlling two capacitors 5pF and 9pF, respectively. Then four integration capacitors (1pF, 6pF, 10pF and 15pF) were obtained. The dynamic range of the circuit was increased 23.5dB. The readout circuit was designed in with the area of 3.6mm×2.9mm in 0.35um CMOS technology.
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Xiaoyan Liu and Fangmin Guo "Readout design for 1×64 quantum dot-in-well photodetector array based on wide dynamic range", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89121B (16 August 2013); https://doi.org/10.1117/12.2034652
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KEYWORDS
Capacitors

Photodetectors

Optical instrument design

Readout integrated circuits

Switches

CMOS technology

Amplifiers

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