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Analysis of the temperature effect on electrical characteristics of double barrier metal-oxide-semiconductor structure is
presented in the work. Results of the simulation of electrical characteristics obtained with the original theoretical model
are compared with the measurements of the fabricated DB MOS structure.
Dominik Tanous,Andrzej Mazurak, andBogdan Majkusiak
"Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure", Proc. SPIE 8902, Electron Technology Conference 2013, 89020R (25 July 2013); https://doi.org/10.1117/12.2031279
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Dominik Tanous, Andrzej Mazurak, Bogdan Majkusiak, "Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure," Proc. SPIE 8902, Electron Technology Conference 2013, 89020R (25 July 2013); https://doi.org/10.1117/12.2031279