Simulation and correction of resist charging due to fogging in electron-beam lithography

Sergey Babin; Sergey Borisov; Vladimir Militsin; Elena Patyukova

doi:10.1117/12.2032177

1 October 2013 Simulation and correction of resist charging due to fogging in electron-beam lithography

Sergey Babin, Sergey Borisov, Vladimir Militsin, Elena Patyukova

Proceedings Volume 8880, Photomask Technology 2013; 888019 (2013) https://doi.org/10.1117/12.2032177
Event: SPIE Photomask Technology, 2013, Monterey, California, United States

Abstract

Improvements in the variation of critical dimensions (CD) and placement accuracy in electron beam lithography (EBL) are of high importance in the modern maskmaking industry where acceptable variations are on the one nanometer range over the mask area. In EBL, electrons backscatter from the resist and substrate, reach the bottom of objective lens and come back to the resist, causing undesirable exposure and charging far away from the point of exposure. This fogging affects both CD variation and placement accuracy. The Monte Carlo software CHARIOT was upgraded to be capable of simulating this fogging effect. The results of simulations are presented for variety of conditions. The results were used for the correction of charging placement error. Fogging is one of the contributing factors to the charging placement error; the DISPLACE software tool predicts the displacement map for any layout, system setup and exposure strategy, which allows for the correction of placement error in maskmaking.

Citation Download Citation

Sergey Babin, Sergey Borisov, Vladimir Militsin, and Elena Patyukova "Simulation and correction of resist charging due to fogging in electron-beam lithography", Proc. SPIE 8880, Photomask Technology 2013, 888019 (1 October 2013); https://doi.org/10.1117/12.2032177

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