Paper
29 May 2013 New silicon technologies enable high-performance arrays of single photon avalanche diodes
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Abstract
In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency at the longer wavelengths (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we will analyze the factors the currently prevent the fabrication of arrays of SPADs by adopting such a Red-Enhanced (RE) technology and we will propose further modifications to the device structure that will enable the fabrication of high performance RE-SPAD arrays for photon timing applications.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Angelo Gulinatti, Ivan Rech, Piera Maccagnani, Sergio Cova, and Massimo Ghioni "New silicon technologies enable high-performance arrays of single photon avalanche diodes", Proc. SPIE 8727, Advanced Photon Counting Techniques VII, 87270M (29 May 2013); https://doi.org/10.1117/12.2016384
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CITATIONS
Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Sensors

Silicon

Single photon

Photon counting

Avalanche photodiodes

Diffusion

Manufacturing

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