New generation transistor technologies enabled by 2D crystals

D. Jena

doi:10.1117/12.2018450

29 May 2013 New generation transistor technologies enabled by 2D crystals

D. Jena

Proceedings Volume 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V; 872507 (2013) https://doi.org/10.1117/12.2018450
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

The discovery of graphene opened the door to 2D crystal materials. The lack of a bandgap in 2D graphene makes it unsuitable for electronic switching transistors in the conventional field-effect sense, though possible techniques exploiting the unique bandstructure and nanostructures are being explored. The transition metal dichalcogenides have 2D crystal semiconductors, which are well-suited for electronic switching. We experimentally demonstrate field effect transistors with current saturation and carrier inversion made from layered 2D crystal semiconductors such as MoS₂, WS₂, and the related family. We also evaluate the feasibility of such semiconducting 2D crystals for tunneling field effect transistors for low-power digital logic. The article summarizes the current state of new generation transistor technologies either proposed, or demonstrated, with a commentary on the challenges and prospects moving forward.

Citation Download Citation

D. Jena "New generation transistor technologies enabled by 2D crystals", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 872507 (29 May 2013); https://doi.org/10.1117/12.2018450

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