Simulation of spacer-based SADP (Self-Aligned Double-Patterning) for 15nm half pitch

Stewart Robertson; Patrick Wong; Janko Versluijs; Vincent Wiaux

doi:10.1117/12.2013877

12 April 2013 Simulation of spacer-based SADP (Self-Aligned Double-Patterning) for 15nm half pitch

Stewart Robertson, Patrick Wong, Janko Versluijs, Vincent Wiaux

Proceedings Volume 8683, Optical Microlithography XXVI; 86830Y (2013) https://doi.org/10.1117/12.2013877
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Spacer based SADP (Self-Aligned Double Patterning) is used increasingly in IC manufacturing as design rules outstrip the resolution capabilities of traditional single exposure lithography processes. In this paper, a 15nm half pitch SADP process based upon an EUV single exposure produced mandrel is modeled using commercial simulation software (PROLITH X4.2, KLA-Tencor corp.). Good accuracy is observed when the simulated results are compared to actual experimental results. Artifacts present in the final spacer pattern are clearly traceable to the resist imaging step.

Citation Download Citation

Stewart Robertson, Patrick Wong, Janko Versluijs, and Vincent Wiaux "Simulation of spacer-based SADP (Self-Aligned Double-Patterning) for 15nm half pitch", Proc. SPIE 8683, Optical Microlithography XXVI, 86830Y (12 April 2013); https://doi.org/10.1117/12.2013877

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