The impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant; Edita Tejnil; Tim Lin; Steffen Schultze; Peter Buck; Franklin Kalk; Kent Nakagawa; Guoxiang Ning; Paul Ackmann; Fritz Gans; Christian Buergel

doi:10.1117/12.2013748

12 April 2013 The impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Tim Lin, Steffen Schultze, Peter Buck, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Author Affiliations +

Proceedings Volume 8683, Optical Microlithography XXVI; 868307 (2013) https://doi.org/10.1117/12.2013748
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, which must balance accuracy demands with simulation runtime boundary conditions, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned to wafer CD data over a small range around the presumed set point, it can be dangerous to do so since CD errors can alias across multiple input variables. Therefore, many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine with a simulation sensitivity study, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD Bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and awareness.

Citation Download Citation

John Sturtevant, Edita Tejnil, Tim Lin, Steffen Schultze, Peter Buck, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, and Christian Buergel "The impact of 14-nm photomask uncertainties on computational lithography solutions", Proc. SPIE 8683, Optical Microlithography XXVI, 868307 (12 April 2013); https://doi.org/10.1117/12.2013748

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available