Track processing optimizations for different EUV resist platforms: preparing for a NXE:3300 baseline process

Philippe Foubert; Koichi Matsunaga; Hideo Shite; Takeshi Shimoaoki; Kathleen Nafus; Anne-Marie Goethals; Dieter Van Den Heuvel; Jan Hermans; Eric Hendrickx; Hitoshi Kosugi

doi:10.1117/12.2011514

1 April 2013 Track processing optimizations for different EUV resist platforms: preparing for a NXE:3300 baseline process

Philippe Foubert, Koichi Matsunaga, Hideo Shite, Takeshi Shimoaoki, Kathleen Nafus, Anne-Marie Goethals, Dieter Van Den Heuvel, Jan Hermans, Eric Hendrickx, Hitoshi Kosugi

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86792T (2013) https://doi.org/10.1117/12.2011514
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

To make sure a baseline process will be ready for the evaluation of the NXE:3300, imec evaluates promising new EUV resist materials with regards to imaging, process window and line width roughness (LWR) performance. From those screening evaluations, highest performing materials meeting dose sensitivity requirements are selected to be installed on the coat/develop track. This work details the process optimization results of the different selected resist platforms with regards to full wafer processing. Evaluations are executed on the ASML NXE:3100 equipped with a laser-assisted discharge produced plasma source from XTREME technologies, and interfaced to a TEL CLEAN TRACKTM LITHIUS ProTM -EUV.

Citation Download Citation

Philippe Foubert, Koichi Matsunaga, Hideo Shite, Takeshi Shimoaoki, Kathleen Nafus, Anne-Marie Goethals, Dieter Van Den Heuvel, Jan Hermans, Eric Hendrickx, and Hitoshi Kosugi "Track processing optimizations for different EUV resist platforms: preparing for a NXE:3300 baseline process", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792T (1 April 2013); https://doi.org/10.1117/12.2011514

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