Photoluminescence Studies Of Epitaxial Layers In InGaAsP/InP And InGaAs/InP Heterostructures

Wojciech Lewandowski; Bohdan Mroziewicz

doi:10.1117/12.943572

1 January 1987 Photoluminescence Studies Of Epitaxial Layers In InGaAsP/InP And InGaAs/InP Heterostructures

Wojciech Lewandowski, Bohdan Mroziewicz

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943572
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Photoluminescence spectra measured on angle lapped InGaAs/InP and InGaAsP/InP LPE grown heterostructures have been used to determine carrier concentration and composition profiles in the consecutive epitaxial layers. The results have been supported by the ones obtained by SIMS measurements. It was also found that the shape of the photoluminescence spectrum can give an information on the lattice mismatch between ternary and quaternary epitaxial layers and the InP substrate.

Citation Download Citation

Wojciech Lewandowski and Bohdan Mroziewicz "Photoluminescence Studies Of Epitaxial Layers In InGaAsP/InP And InGaAs/InP Heterostructures", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943572

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