Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications

Tetsuya Yagi; Naoyuki Shimada; Takehiro Nishida; Hiroshi Mitsuyama; Motoharu Miyashita

doi:10.1117/12.2003447

4 March 2013 Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications

Tetsuya Yagi, Naoyuki Shimada, Takehiro Nishida, Hiroshi Mitsuyama, Motoharu Miyashita

Author Affiliations +

Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 86400E (2013) https://doi.org/10.1117/12.2003447
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Laser based displays, as pico to cinema laser projectors have gathered much attention because of wide gamut, low power consumption, and so on. Laser light sources for the displays are operated mainly in CW, and heat management is one of the big issues. Therefore, highly efficient operation is necessitated. Also the light sources for the displays are requested to be highly reliable. 638 nm broad stripe laser diode (LD) was newly developed for high efficiency and highly reliable operation. An AlGaInP/GaAs red LD suffers from low wall plug efficiency (WPE) due to electron overflow from an active layer to a p-cladding layer. Large optical confinement factor (Γ) design with AlInP cladding layers is adopted to improve the WPE. The design has a disadvantage for reliable operation because the large Γ causes high optical density and brings a catastrophic optical degradation (COD) at a front facet. To overcome the disadvantage, a window-mirror structure is also adopted in the LD. The LD shows WPE of 35% at 25°C, highest record in the world, and highly stable operation at 35°C, 550 mW up to 8,000 hours without any catastrophic optical degradation.

Citation Download Citation

Tetsuya Yagi, Naoyuki Shimada, Takehiro Nishida, Hiroshi Mitsuyama, and Motoharu Miyashita "Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400E (4 March 2013); https://doi.org/10.1117/12.2003447

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