GaSb-based all-semiconductor mid-IR plasmonics

T. Taliercio; V. Ntsame Guilengui; L. Cerutti; J.-B. Rodriguez; E. Tournié

doi:10.1117/12.2007903

4 February 2013 GaSb-based all-semiconductor mid-IR plasmonics

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, E. Tournié

Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 863120 (2013) https://doi.org/10.1117/12.2007903
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Electrical and optical characterizations of highly-doped InAsSb layers lattice matched to GaSb substrates show the possibility to control their plasma frequency in the mid-infrared range. Reflectance experiments performed on InAsSb sub-wavelength arrays evidence localized surface plasmon resonances which can be modeled by finite difference time domain method. By adjusting the refractive index of the surrounding material and the geometry of the periodic arrays it is possible to control the frequency of the plasmonic resonances. Our results show that GaSb-based materials can be the building block of all-semiconductor mid-infrared plasmonic devices.

Citation Download Citation

T. Taliercio, V. Ntsame Guilengui, L. Cerutti, J.-B. Rodriguez, and E. Tournié "GaSb-based all-semiconductor mid-IR plasmonics", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863120 (4 February 2013); https://doi.org/10.1117/12.2007903

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