Role of electron and hole transport processes in conductivity and light emission of silicon nanocrystals field-effect transistors

Laura Cattoni; Andrea Tengattini; Aleksei Anopchenko; Joan Manel Ramìrez; Federico Ferrarese Lupi; Yonder Berencen; Blas Garrido; Jean-Marc Fedeli; Lorenzo Pavesi

doi:10.1117/12.2003084

14 March 2013 Role of electron and hole transport processes in conductivity and light emission of silicon nanocrystals field-effect transistors

Laura Cattoni, Andrea Tengattini, Aleksei Anopchenko, Joan Manel Ramìrez, Federico Ferrarese Lupi, Yonder Berencen, Blas Garrido, Jean-Marc Fedeli, Lorenzo Pavesi

Author Affiliations +

Proceedings Volume 8629, Silicon Photonics VIII; 862914 (2013) https://doi.org/10.1117/12.2003084
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this work, the optoelectronic properties of silicon light emitting field-effect transistors (LEFETs) have been investigated. The devices have been fabricated with silicon nanocrystals in the gate oxide and a semitransparent polycrystalline silicon gate. We compare the properties of LEFET with a more conventional MOS-LED (two-terminal light-emitting capacitor) with the same active material. The ~45 nm thick gate siliconrich oxide is deposited in a size-controlled multilayer geometry by low pressure chemical vapor deposition using standard microelectronic processes in a CMOS line. The multilayer stack is formed by layers of silicon oxide and silicon rich silicon oxide. The nanocrystal size and the tunneling barrier width are controlled by the thickness of silicon-rich silicon oxide and stochiometric silicon oxide layers, respectively. The silicon nanocrystals have been characterized by means of spectrally and time resolved photoluminescence, high resolution TEM, and x-ray photoelectron spectroscopy. Resistivity of the devices, capacitance, and electroluminescence under direct and pulsed injection current scheme have been studied and here reported. The optical power density and the external quantum efficiency of the LEFETs will be compared with the MOSLED results. This study will help to develop practical optoelectronic and photonic devices via accurate modeling and engineering of charge transport and exciton recombination in silicon nanocrystal arrays.

Citation Download Citation

Laura Cattoni, Andrea Tengattini, Aleksei Anopchenko, Joan Manel Ramìrez, Federico Ferrarese Lupi, Yonder Berencen, Blas Garrido, Jean-Marc Fedeli, and Lorenzo Pavesi "Role of electron and hole transport processes in conductivity and light emission of silicon nanocrystals field-effect transistors", Proc. SPIE 8629, Silicon Photonics VIII, 862914 (14 March 2013); https://doi.org/10.1117/12.2003084

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Electroluminescence

Oxides

Nanocrystals

External quantum efficiency

Low pressure chemical vapor deposition

Luminescence

Show All Keywords

Keywords/Phrases

Search In:

Publication Years