The effect of aperture layout design on the multi-GHz operation of light-emitting transistors

Peng-Hao Chou; Hsiao-Lun Wang; Chao-Hsin Wu

doi:10.1117/12.2001197

11 December 2012 The effect of aperture layout design on the multi-GHz operation of light-emitting transistors

Peng-Hao Chou, Hsiao-Lun Wang, Chao-Hsin Wu

Proceedings Volume 8564, Nanophotonics and Micro/Nano Optics; 85640D (2012) https://doi.org/10.1117/12.2001197
Event: Photonics Asia, 2012, Beijing, China

Abstract

The base current (I_B) plays a key role in the transistor since its discovery (16 December 1947, Bardeen and Brattain). It separates the low impedance input (emitter) from the high impedance output (collector), thus yielding a “transfer resistor.” Recently, III-V semiconductor material has been fabricated as a heterojunction bipolar transistor (HBT) which can operate as a high speed device. The HBT can be modified and operated as a three-port light-emitting device (an electrical input, electrical output, and a third port optical output) by incorporating one or more quantum wells in the base region, thus becoming a heterojunction bipolar light-emitting transistor (LET). In the present work, we have designed different sizes of emitter diameter D_E and base diameter D_B of InGaP/GaAs LETs in aperture layout design. Through different layout designs, the LETs exhibit different electrical current gain (β= I_C/I_B) and optical light output due to different carrier recombination processes in the transistor base region. By reducing the lateral emitter size from 18 to 13 μm, β increases due to the higher injection current densities and better confinement of the radiative recombination in the base region. Moreover, β increases when reducing the base diameter from 27 to 22 μm with fixed emitter diameter. The effective carrier recombination lifetime, τ_rec, can be estimated from dc analysis and rf measurement (small-signal modulation).We have obtained multi-GHz spontaneous light modulation of LETs, and the device performance is closely related to different layout designs with different device parasitics.

Citation Download Citation

Peng-Hao Chou, Hsiao-Lun Wang, and Chao-Hsin Wu "The effect of aperture layout design on the multi-GHz operation of light-emitting transistors", Proc. SPIE 8564, Nanophotonics and Micro/Nano Optics, 85640D (11 December 2012); https://doi.org/10.1117/12.2001197

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