The influence of growth parameters on the formation on InAs/GaAs by MOCVD

Hui Wang; Qi Wang; Zhi-Gang Jia; Ying-Ce Yan; Yong-Qing Huang; Xiao-Min Ren

doi:10.1117/12.999608

27 November 2012 The influence of growth parameters on the formation on InAs/GaAs by MOCVD

Hui Wang, Qi Wang, Zhi-Gang Jia, Ying-Ce Yan, Yong-Qing Huang, Xiao-Min Ren

Proceedings Volume 8555, Optoelectronic Devices and Integration IV; 855511 (2012) https://doi.org/10.1117/12.999608
Event: Photonics Asia, 2012, Beijing, China

Abstract

InAs/GaAs quantum dots (QDs) were grown by Metal-Organic Chemical Vapour Deposition (MOCVD) in the Stranski-Krastanow growth mode. The influence of growth parameters such as V/III ratio, growth temperature, QDs deposit thickness and the deposition rate of the overgrowth layer have been investigated. Through the room temperature photoluminescence (PL) spectra, we have obtained the quantum dots’ characters. The growth of QDs is very sensitive to the parameters, and the parameters influence the QDs quality nonlinearly. After an extensive study of these growth parameters, we achieve a balance of all the growth parameters with which InAs/GaAs QDs with 80meV of full width at half maximum (FWHM) at 1.12μm have been achieved.

Citation Download Citation

Hui Wang, Qi Wang, Zhi-Gang Jia, Ying-Ce Yan, Yong-Qing Huang, and Xiao-Min Ren "The influence of growth parameters on the formation on InAs/GaAs by MOCVD", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 855511 (27 November 2012); https://doi.org/10.1117/12.999608

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