Coplanar lumped electroabsorption modulator fabricated on the common n-type InP substrate

Can Zhang; Song Liang; Li Ma; Baojun Wang; Hongliang Zhu; Wei Wang

doi:10.1117/12.999439

27 November 2012 Coplanar lumped electroabsorption modulator fabricated on the common n-type InP substrate

Can Zhang, Song Liang, Li Ma, Baojun Wang, Hongliang Zhu, Wei Wang

Proceedings Volume 8555, Optoelectronic Devices and Integration IV; 85550V (2012) https://doi.org/10.1117/12.999439
Event: Photonics Asia, 2012, Beijing, China

Abstract

A coplanar lumped electroabsorption modulator (Co-LEAM) based on n-type InP substrate is designed and fabricated, which shows a capacitance of 0.62 pF and a high reverse breakdown voltage (VBR) nearly -26 v. Other characteristics are compared with the common LEAM with the back n-electrode.

Citation Download Citation

Can Zhang, Song Liang, Li Ma, Baojun Wang, Hongliang Zhu, and Wei Wang "Coplanar lumped electroabsorption modulator fabricated on the common n-type InP substrate", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85550V (27 November 2012); https://doi.org/10.1117/12.999439

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