The characteristics of spectral in vertical-cavity surfacing-emitting lasers based on defect layer structure

B. L. Guan; G. Z. Shi; Q. Wang; X. Guo; G. D. Shen

doi:10.1117/12.979656

29 November 2012 The characteristics of spectral in vertical-cavity surfacing-emitting lasers based on defect layer structure

B. L. Guan, G. Z. Shi, Q. Wang, X. Guo, G. D. Shen

Author Affiliations +

Proceedings Volume 8552, Semiconductor Lasers and Applications V; 855209 (2012) https://doi.org/10.1117/12.979656
Event: Photonics Asia, 2012, Beijing, China

Abstract

Based on the band gap theory, a dual-wavelength VCSELs with same direction, equal-intensity, high-Q program is presented. The wavelengths of the VCSEL can be located with the aid of the Al_0.8Ga_0.2As defect layer in 1D photonic crystal structure. The results indicated that one-dimensional PC with a sheet of defect layer provides a parent structure on which laser beam can be well engineered without the expense of the macroscopic structural integrity.

Citation Download Citation

B. L. Guan, G. Z. Shi, Q. Wang, X. Guo, and G. D. Shen "The characteristics of spectral in vertical-cavity surfacing-emitting lasers based on defect layer structure", Proc. SPIE 8552, Semiconductor Lasers and Applications V, 855209 (29 November 2012); https://doi.org/10.1117/12.979656

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