Cavity optimization of 1.3um InAs/InGaAs quantum dot passively mode-locked lasers

Tianhong Xu; Paolo Bardella; Ivo Montrosset

doi:10.1117/12.981762

29 November 2012 Cavity optimization of 1.3μm InAs/InGaAs quantum dot passively mode-locked lasers

Tianhong Xu, Paolo Bardella, Ivo Montrosset

Proceedings Volume 8552, Semiconductor Lasers and Applications V; 855208 (2012) https://doi.org/10.1117/12.981762
Event: Photonics Asia, 2012, Beijing, China

Abstract

Performance improving for monolithic two-section passively mode-locked (ML) quantum dot lasers has been systematically investigated using the Finite-Difference Traveling-Wave numerical model. Two approaches have been considered. For the first case, we changed simultaneously the length of the saturable absorber and the output facet reflectivity. We demonstrate that, by properly choosing these two parameters, a reduction of the pulse width from 3.4 ps to 1.1 ps and an increase the peak power 1 W to 1.6 W were obtained. For another case, we exchanged the optical power reflectivities at two end facets. We found that this approach can be used to further improve the ML stability for devices considered in the first approach where trailing edge instability is the main restriction.

Citation Download Citation

Tianhong Xu, Paolo Bardella, and Ivo Montrosset "Cavity optimization of 1.3μm InAs/InGaAs quantum dot passively mode-locked lasers", Proc. SPIE 8552, Semiconductor Lasers and Applications V, 855208 (29 November 2012); https://doi.org/10.1117/12.981762

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