Paper
8 November 2012 Study for compensation of unexpected image placement error caused by VSB mask writer deflector
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Abstract
The Electron Optical System (EOS) is designed for the electron beam machine employing a vector scanned variable shaped beam (VSB) with the deflector. Most VSB systems utilize multi stage deflection architecture to obtain a high precision and a high-speed deflection at the same time. Many companies use the VSB mask writer and they have a lot of experiences about Image Placement (IP) error suffering from contaminated EOS deflector. And also most of VSB mask writer users are having already this error. In order to use old VSB mask writer, we introduce the method how to compensate unexpected IP error from VSB mask writer. There are two methods to improve this error due to contaminated deflector. The one is the usage of 2nd stage grid correction in addition to the original stage grid. And the other is the usage of uncontaminated area in the deflector. According to the results of this paper, 30% of IP error can be reduced by 2nd stage grid correction and the change of deflection area in deflector. It is the effective method to reduce the deflector error at the VSB mask writer. And it can be the one of the solution for the long-term production of photomask.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyun-joo Lee, Min-kyu Choi, Seong-yong Moon, Han-Ku Cho, Jonggul Doh, and Jinho Ahn "Study for compensation of unexpected image placement error caused by VSB mask writer deflector", Proc. SPIE 8522, Photomask Technology 2012, 852228 (8 November 2012); https://doi.org/10.1117/12.964098
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KEYWORDS
Vestigial sideband modulation

Photomasks

Associative arrays

Contamination

Beam shaping

Calibration

Data modeling

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