Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials

Mao-Hua Du; Koushik Biswas; David J. Singh

doi:10.1117/12.930072

24 October 2012 Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials

Mao-Hua Du, Koushik Biswas, David J. Singh

Author Affiliations +

Proceedings Volume 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV; 85070M (2012) https://doi.org/10.1117/12.930072
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

In this paper, we report theoretical studies of native defects and dopants in a number of room-temperature semiconductor radiation detection materials, i.e., CdTe, TlBr, and Tl₆SeI₄. We address several important questions, such as what causes high resistivity in these materials, what explains good μτ product (carrier mobility-lifetime product) in soft-lattice ionic compounds that have high defect density, and how to obtain high resistivity and low carrier trapping simultaneously. Our main results are: (1) shallow donors rather than deep ones are responsible for high resistivity in high-quality detectorgrade CdTe; (2) large dielectric screening and the lack of deep levels from low-energy native defects may contribute to the good μτ products for both electrons and holes in TlBr; (3) the polarization phenomenon in Tl₆SeI₄is expected to be much reduced compared to that in TlBr.

Citation Download Citation

Mao-Hua Du, Koushik Biswas, and David J. Singh "Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials", Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070M (24 October 2012); https://doi.org/10.1117/12.930072

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