Erbium oxide is a promising candidate for possible applications as Si-based light emitting devices in nanoscale
electronics. The current report presents findings pertaining to the effects of the structural properties of erbium-based thin
films on their photoluminescence characteristics. Erbium metal films were deposited on silicon via electron beam
evaporation followed by thermal oxidation. The effects of post-deposition annealing conditions on the structural and
optical properties of the thin films were examined using a variety of techniques, such as spectroscopic ellipsometry, xray
diffraction, and x-ray photoelectron spectroscopy. It was shown that the thin films evolved as function of thermal
treatment from an Er-rich to an ErO-rich (700°C) to an Er2O3-rich (900°C) phase due to an increase in oxygen
incorporation with higher oxidation temperatures. At temperatures ≥ 1000°C, out-diffusion of silicon from the substrate
led to the formation of erbium monosilicate. Furthermore, the photoluminescence spectra of these various phases were
measured, and the correlation between structural properties and luminescence characteristics will be discussed in this
paper.
|