Aspects of chip and cell size of silicon photomultipliers

P. Iskra; Christoph Dietzinger; T. Eggert; M. Fraczek; T. Ganka; L. Höllt; J. Knobloch; N. Miyakawa; A. Pahlke; F. Wiest; R. Fojt

doi:10.1117/12.930471

10 October 2012 Aspects of chip and cell size of silicon photomultipliers

P. Iskra, Christoph Dietzinger, T. Eggert, M. Fraczek, T. Ganka, L. Höllt, J. Knobloch, N. Miyakawa, A. Pahlke, F. Wiest, R. Fojt

Author Affiliations +

Proceedings Volume 8460, Biosensing and Nanomedicine V; 84601K (2012) https://doi.org/10.1117/12.930471
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

Abstract

Requirements like device miniaturization, insensitivity to magnetic field and cost aspects in the field of low level light detection will lead to a replacement of the conventional photomultiplier tube by Silicon Photomultiplier (SiPM) for several applications in case the photon detection efficiency will be comparably higher at the same price level. This novel solid-state sensor consists of an array of parallel connected avalanche photodiodes operated in limited Geiger-mode. The triggered cells are recovered by an upstream connected quenching resistor. The main characteristics are gain, noise, photon detection efficiency (PDE), dynamic range and time resolution. To meet the requirements of various potential applications, SiPMs need to be available with several micro pixel sizes and total active areas. For this reason KETEK produces devices with microcell pitches from 15μm up to 100μm and total active sensor areas from 1.0 x 1.0 mm² up to 6.0 mm x 6.0 mm². The effects of this scaling on the SiPM device parameters are discussed.

Citation Download Citation

P. Iskra, Christoph Dietzinger, T. Eggert, M. Fraczek, T. Ganka, L. Höllt, J. Knobloch, N. Miyakawa, A. Pahlke, F. Wiest, and R. Fojt "Aspects of chip and cell size of silicon photomultipliers", Proc. SPIE 8460, Biosensing and Nanomedicine V, 84601K (10 October 2012); https://doi.org/10.1117/12.930471

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