New CDSEM technology and its performance for multiple patterning process

Yuta Chihara; Keisuke Ito; Masayuki Kuribara; Toshimichi Iwai; Soichi Shida; Masahiro Seyama; Jun Matsumoto; Takayuki Nakamura

doi:10.1117/12.964404

29 June 2012 New CDSEM technology and its performance for multiple patterning process

Yuta Chihara, Keisuke Ito, Masayuki Kuribara, Toshimichi Iwai, Soichi Shida, Masahiro Seyama, Jun Matsumoto, Takayuki Nakamura

Author Affiliations +

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844109 (2012) https://doi.org/10.1117/12.964404
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

As an alternative to EUV lithography, ArF immersion multiple patterning lithography has been heavily employed in semiconductor fabrication. This situation has led to increase use of bright-field photomasks with floating small patterns. Latest CDSEMs are equipped with various charge compensation features and applicable for devices with conductive and insulating material. However, there remain some difficulties when floating small patterns are to be measured. One of the specific examples is a floating dot on a via mask, dimension of which is around 200nm at the 45 nm process node, scaling down to 100nm at the 22nm process node. Since the dot has very small capacitance, it is easily charged by electron beam irradiation, and discharged in a short period. This kind of temporary voltage variation can affect the secondary electron yield, causes degradation of the SEM image contrast. We have analyzed that the "edge effect", which is the principle of SEM, has a primary role in small dot charging, and interchanging of scan line effectively suppresses the voltage variation. Based on this concept, we have developed a new scan technology for our "Multi Vision Metrology SEM" E3630, and improved the performance of image-based measurement. In this paper, the new scan technology and evaluation results are presented.

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Yuta Chihara, Keisuke Ito, Masayuki Kuribara, Toshimichi Iwai, Soichi Shida, Masahiro Seyama, Jun Matsumoto, and Takayuki Nakamura "New CDSEM technology and its performance for multiple patterning process", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844109 (29 June 2012); https://doi.org/10.1117/12.964404

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KEYWORDS

Scanning electron microscopy

Photomasks

Metrology

Electron beam lithography

Line scan image sensors

Electron beams

Lithography

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