Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg+ ions

Sanna Ranta; Tomi Leinonen; Miki Tavast; Ryan Epstein; Mircea Guina

doi:10.1117/12.922514

10 May 2012 Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg⁺ ions

Sanna Ranta, Tomi Leinonen, Miki Tavast, Ryan Epstein, Mircea Guina

Proceedings Volume 8432, Semiconductor Lasers and Laser Dynamics V; 84320V (2012) https://doi.org/10.1117/12.922514
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

This paper presents the development and narrow-linewidth characteristics of an optically-pumped vertical external-cavity surface-emitting laser emitting light near 1120 nm. The laser development is motivated by the need to achieve narrowlinewidth, frequency-stable laser emission near 280 nm for cooling of Mg⁺ ions. The laser is capable of emitting ~0.8 W at 1118.542 nm in a less than 300 kHz linewidth.

Citation Download Citation

Sanna Ranta, Tomi Leinonen, Miki Tavast, Ryan Epstein, and Mircea Guina "Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg⁺ ions", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320V (10 May 2012); https://doi.org/10.1117/12.922514

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