High energy picosecond laser for applications in microstructuring of crystalline silicon

Xuechun Lin; Haijuan Yu; Yongguang Huang; Ling Zhang; Hongliang Zhu

doi:10.1117/12.978239

15 October 2012 High energy picosecond laser for applications in microstructuring of crystalline silicon

Xuechun Lin, Haijuan Yu, Yongguang Huang, Ling Zhang, Hongliang Zhu

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84193F (2012) https://doi.org/10.1117/12.978239
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Black silicon is very promising for the third generation Solar Cells, because of its fascinating light absorption of above 98% in visible spectrum and more than 90% in 800-2500 nm, and its surface micro-nano structures enlarge light trapping intermediate impurities levels caused by supersaturated doping expand absorptive limitation of crystalline Si. In recent years femtosecond laser pulses were widely used in the process of improving the absorptance by irradiating silicon surfaces with in the presence of different gases. Nevertheless, picosecond laser used to fabricate large-area black silicon is seldom reported. A diode-pumped picosecond Nd:YAG regenerative amplifier laser system designed for microstructuring the crystalline silicon was reported in this paper. At the repetition of 1 kHz, the system generated 1 W average-power, 26-ps-long pulses with a pulse energy of 1 mJ at 1064 nm, which corresponds the peak power of 38.5 MW. A 0.5 W second-harmonic 532 nm laser is achieved with a 20 mm long noncritically phase-matched lithium triborate (LBO) crystal from the 1W 1064 nm laser. igh optical absorption black Si irradiated with 1064 nm and 532 nm picosecond pulses in SF6 at different laser fluence. And the relationship between the surface morphology and the wavelength or the laser fluence was researched.

Citation Download Citation

Xuechun Lin, Haijuan Yu, Yongguang Huang, Ling Zhang, and Hongliang Zhu "High energy picosecond laser for applications in microstructuring of crystalline silicon", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84193F (15 October 2012); https://doi.org/10.1117/12.978239

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
5 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Semiconductor lasers

Picosecond phenomena

Laser crystals

Crystals

Pulsed laser operation

Optical amplifiers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years